The silicon / SiO2 system.
Saved in:
Personal Name(s): | Balk, P., editor |
---|---|
Imprint: |
Amsterdam :
Elsevier,
1988.
|
Physical Description: |
IX, 356 S. |
Note: |
englisch |
ISBN: |
9780444426031 0444426035 |
Series Title: |
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Materials science monographs ;
vol 0032. |
Keywords: |
technology and kinetics of SiO2 growth physical structure and chemical nature of the silicon/SiO2 interfacial region the oxidation process and silicon/SiO2 system properties charge trapping in SiO2 and the silicon/SiO2 interface electrical evaluation of the silicon/SiO2 system |
Classification: | |
Shelf Classification: |
LEADER | 01267nam a2200313 n 4500 | ||
---|---|---|---|
001 | 122056 | ||
005 | 19970518000000.0 | ||
008 | r1988 | ||
020 | |a 0444426035 | ||
035 | |a (Sirsi) a108596 | ||
084 | 0 | |a FFPE - Thin film electronic properties, semiconductor interfaces |2 ZB | |
084 | 1 | |a FFP - Physik dünner Filme |2 LS | |
245 | 0 | 4 | |a The silicon / SiO2 system. |
260 | |a Amsterdam : |b Elsevier, |c 1988. | ||
300 | |a IX, 356 S. | ||
490 | 0 | |a Materials science monographs ; |v vol 0032. | |
500 | |a englisch | ||
596 | |a 1 10 | ||
653 | |a technology and kinetics of SiO2 growth | ||
653 | |a physical structure and chemical nature of the silicon/SiO2 interfacial region | ||
653 | |a the oxidation process and silicon/SiO2 system properties | ||
653 | |a charge trapping in SiO2 and the silicon/SiO2 interface | ||
653 | |a electrical evaluation of the silicon/SiO2 system | ||
700 | 1 | |a Balk, P., |e Hrsg. | |
900 | |a S 004259-0032'01' | ||
900 | |a FFP 061 | ||
908 | |a Monographie, Sammelwerk | ||
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949 | |a FFP 061 |w LC |c 1 |i 1088103661 |d 15/1/2007 |e 1/12/2006 |l STACKS |m ZB |n 4 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |