Ion beam modification of insulators.
Saved in:
| Personal Name(s): | Mazzoldi, P., editor |
|---|---|
| Imprint: |
Amsterdam :
Elsevier,
1987.
|
| Physical Description: |
XXV, 740 S. |
| Note: |
englisch |
| ISBN: |
9780444428165 044442816X |
| Series Title: |
Beam modification of materials ;
vol 0002. |
| Keywords: |
ion ranges and energy deposition in insulators sputtering of insulators characterization techniques for ion bombarded insulators defect creation in ion bombarded inorganic insulators ion beam modification of glasses mechanical and tribological properties of ion implanted ceramics synthesis of dielectric layers in silicon by ion implantation ion beam effects in organic molecular solids sputtering of condensed molecular and rare gas solids ion beam modification of optoelectronic materials ion implantation in ferrimagnetic garnets ion beam application to nuclear waste materials role of defects in the aqueous dissolution of ion bombarded insulators chemical effects of ion bombardment ion beam effects of thin film adhesion astrophysical implications of ions incident on insulators appendix: tables of ion ranges in insulators |
| Classification: | |
| Shelf Classification: |
| LEADER | 01878nam a2200445 n 4500 | ||
|---|---|---|---|
| 001 | 124152 | ||
| 005 | 19970518000000.0 | ||
| 008 | r1987 | ||
| 020 | |a 044442816X | ||
| 035 | |a (Sirsi) a110442 | ||
| 084 | 0 | |a FGGE - Ion beam surface modification |2 ZB | |
| 084 | 1 | |a FGG - Ionenstrahltechnologie |2 LS | |
| 245 | 0 | 0 | |a Ion beam modification of insulators. |
| 260 | |a Amsterdam : |b Elsevier, |c 1987. | ||
| 300 | |a XXV, 740 S. | ||
| 490 | 0 | |a Beam modification of materials ; |v vol 0002. | |
| 500 | |a englisch | ||
| 596 | |a 1 | ||
| 653 | |a ion ranges and energy deposition in insulators | ||
| 653 | |a sputtering of insulators | ||
| 653 | |a characterization techniques for ion bombarded insulators | ||
| 653 | |a defect creation in ion bombarded inorganic insulators | ||
| 653 | |a ion beam modification of glasses | ||
| 653 | |a mechanical and tribological properties of ion implanted ceramics | ||
| 653 | |a synthesis of dielectric layers in silicon by ion implantation | ||
| 653 | |a ion beam effects in organic molecular solids | ||
| 653 | |a sputtering of condensed molecular and rare gas solids | ||
| 653 | |a ion beam modification of optoelectronic materials | ||
| 653 | |a ion implantation in ferrimagnetic garnets | ||
| 653 | |a ion beam application to nuclear waste materials | ||
| 653 | |a role of defects in the aqueous dissolution of ion bombarded insulators | ||
| 653 | |a chemical effects of ion bombardment | ||
| 653 | |a ion beam effects of thin film adhesion | ||
| 653 | |a astrophysical implications of ions incident on insulators | ||
| 653 | |a appendix: tables of ion ranges in insulators | ||
| 700 | 1 | |a Mazzoldi, P., |e Hrsg. | |
| 900 | |a S 005687-0002'01' | ||
| 900 | |a FGG 074 | ||
| 908 | |a Monographie, Sammelwerk | ||
| 949 | |a FGG 074 |w LC |c 1 |i 1088105026 |d 9/10/1997 |e 8/9/1997 |l STACKS |m ZB |n 2 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT | ||