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Physics of quantum electron devices.

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Personal Name(s): Capasso, F., editor
Imprint: Berlin : Springer, 1990.
Physical Description: XVI, 403 S.
Note: englisch
ISBN: 9783540511281
3540511288
0387511288
9780387511283
Series Title: Springer series in electronics and photonics ; vol 0028.
Keywords: the nature of molecular beam epitaxy (MBE) and consequences for quantum microstructures
nanolithography for ultrasmall structure fabrication
theory of resonant tunneling and surface superlattices
the investigation of single and double barrier (resonant tunneling) heterostructures using high magnetic fields
microwave and millimeter wave resonant tunneling devices
resonant tunneling and superlattice devices: physics and circuits
resonant tunneling hot electron transistors (RHET)
ballistic electron transport in hot electron transistors
quantum interference devices
carrier confinement to one and zero degrees of freedom
quantum effects in quasi- one- dimensional MOSFETs
Classification:
FJLB - Physics of semiconductor devices
FFPG - Multilayer systems, quantum structures
Shelf Classification:
FJL - Physik der Festkörperbauelemente
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