Silicon molecular beam epitaxy. vol 0001.
Saved in:
Personal Name(s): | Kasper, E., editor |
---|---|
Imprint: |
Boca-Raton, FL :
CRC Pr.,
1988.
|
Physical Description: |
246 S. |
Note: |
englisch |
ISBN: |
9780849368301 0849368308 |
Series Title: |
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Silicon molecular beam epitaxy ;
vol 0001. |
Keywords: |
silicon MBE growth systems - technology and practice silicon MBE: homoepitaxy silicon MBE: models for silicon growth and dopant incorporation silicon MBE: insulator over silicon structures growth of insulators on silicon by MBE silicon MBE: device application |
Classification: | |
Shelf Classification: |
LEADER | 01257nam a2200337 n 4500 | ||
---|---|---|---|
001 | 129133 | ||
005 | 19970519000000.0 | ||
008 | r1988 | ||
020 | |a 0849368308 | ||
035 | |a (Sirsi) a114783 | ||
084 | 0 | |a FGKC - Vacuum deposition, MBE |2 ZB | |
084 | 0 | |a FJKB - Elemental semiconductors |2 ZB | |
084 | 0 | |a FGCD - Crystal growth of specific substances |2 ZB | |
084 | 1 | |a FGK - Dünnfilmtechnologie, Epitaxie |2 LS | |
245 | 0 | 0 | |a Silicon molecular beam epitaxy. vol 0001. |
260 | |a Boca-Raton, FL : |b CRC Pr., |c 1988. | ||
300 | |a 246 S. | ||
490 | 0 | |a Silicon molecular beam epitaxy ; |v vol 0001. | |
500 | |a englisch | ||
596 | |a 1 | ||
653 | |a silicon MBE growth systems - technology and practice | ||
653 | |a silicon MBE: homoepitaxy | ||
653 | |a silicon MBE: models for silicon growth and dopant incorporation | ||
653 | |a silicon MBE: insulator over silicon structures | ||
653 | |a growth of insulators on silicon by MBE | ||
653 | |a silicon MBE: device application | ||
700 | 1 | |a Kasper, E., |e Hrsg. | |
900 | |a B 065740'01'-001 | ||
900 | |a FGK 056-01 | ||
908 | |a Monographie, Sammelwerk | ||
949 | |a FGK 056-01 |w LC |c 1 |i 1090100267 |d 26/5/1999 |e 16/2/1999 |l STACKS |m ZB |n 2 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |