Survey of semiconductor physics vol 0002: barriers, junctions, surfaces, and devices.
Survey of semiconductor physics :
Saved in:
| Personal Name(s): | Boeer, K. W. |
|---|---|
| Imprint: |
New-York, NY :
VanNostrand Reinhold,
1992.
|
| Physical Description: |
XLV, 1438 S. |
| Note: |
englisch |
| ISBN: |
0442006721 9780442006723 |
| Series Title: |
Survey of semiconductor physics ;
vol 0002. |
| Keywords: |
surface properties of semiconductors crystal surfaces surface analysis surface structures crystal growth, epitaxy surface phonons electronic surface and interface states semiconductor interfaces and contacts electron penetration through surfaces photon penetration through surfaces surface influence on bulk properties space charge effects in semiconductors space charges in insulators creation of space charge regions in solids the Schottky barrier minority carriers minority carrier currents Schottky barrier in two carrier model pn- homojunctions carrier velocity limitation semiconductor heterojunctions the photovoltaic effect the Schottky barrier photodiode the pn- junction with light the heterojunctin with light the pin junction with light high field domains current channels materials and fabrication techniques of semiconductor materials purification of semiconductor materials crystallization and device shaping electrodes integrated circuit processing semiconductor devices Schottky barriers and diodes solar cells light emitting devices transistors and multiterminal devices desired properties of new materials, trends in device technology computation routines and tables to semiconductor physics and devices numerical methods important equations and formulas tables on material properties |
| Subject (ZB): | |
| Classification: | |
| Shelf Classification: |
| LEADER | 03179nam a2200877 n 4500 | ||
|---|---|---|---|
| 001 | 136332 | ||
| 005 | 19970519000000.0 | ||
| 008 | r1992 | ||
| 020 | |a 0442006721 | ||
| 035 | |a (Sirsi) a121126 | ||
| 084 | 0 | |a FJH - Semiconductor physics |2 ZB | |
| 084 | 1 | |a FJH - Halbleiterphysik |2 LS | |
| 245 | 0 | 0 | |a Survey of semiconductor physics vol 0002: barriers, junctions, surfaces, and devices. |
| 260 | |a New-York, NY : |b VanNostrand Reinhold, |c 1992. | ||
| 300 | |a XLV, 1438 S. | ||
| 490 | 0 | |a Survey of semiconductor physics ; |v vol 0002. | |
| 500 | |a englisch | ||
| 520 | |a Survey of semiconductor physics : | ||
| 520 | |a surface properties | ||
| 520 | |a space charge effects | ||
| 520 | |a materials and fabrication technology | ||
| 520 | |a devices | ||
| 520 | |a tables | ||
| 596 | |a 1 | ||
| 650 | 4 | |a semiconductor physics | |
| 650 | 4 | |a semiconductor junction | |
| 650 | 4 | |a semiconductor surface | |
| 650 | 4 | |a semiconductor device | |
| 653 | |a surface properties of semiconductors | ||
| 653 | |a crystal surfaces | ||
| 653 | |a surface analysis | ||
| 653 | |a surface structures | ||
| 653 | |a crystal growth, epitaxy | ||
| 653 | |a surface phonons | ||
| 653 | |a electronic surface and interface states | ||
| 653 | |a semiconductor interfaces and contacts | ||
| 653 | |a electron penetration through surfaces | ||
| 653 | |a photon penetration through surfaces | ||
| 653 | |a surface influence on bulk properties | ||
| 653 | |a space charge effects in semiconductors | ||
| 653 | |a space charges in insulators | ||
| 653 | |a creation of space charge regions in solids | ||
| 653 | |a the Schottky barrier | ||
| 653 | |a minority carriers | ||
| 653 | |a minority carrier currents | ||
| 653 | |a Schottky barrier in two carrier model | ||
| 653 | |a pn- homojunctions | ||
| 653 | |a carrier velocity limitation | ||
| 653 | |a semiconductor heterojunctions | ||
| 653 | |a the photovoltaic effect | ||
| 653 | |a the Schottky barrier photodiode | ||
| 653 | |a the pn- junction with light | ||
| 653 | |a the heterojunctin with light | ||
| 653 | |a the pin junction with light | ||
| 653 | |a high field domains | ||
| 653 | |a current channels | ||
| 653 | |a materials and fabrication techniques of semiconductor materials | ||
| 653 | |a purification of semiconductor materials | ||
| 653 | |a crystallization and device shaping | ||
| 653 | |a electrodes | ||
| 653 | |a integrated circuit processing | ||
| 653 | |a semiconductor devices | ||
| 653 | |a Schottky barriers and diodes | ||
| 653 | |a solar cells | ||
| 653 | |a light emitting devices | ||
| 653 | |a transistors and multiterminal devices | ||
| 653 | |a desired properties of new materials, trends in device technology | ||
| 653 | |a computation routines and tables to semiconductor physics and devices | ||
| 653 | |a numerical methods | ||
| 653 | |a important equations and formulas | ||
| 653 | |a tables on material properties | ||
| 700 | 1 | |a Boeer, K. W. | |
| 900 | |a B 066874'01'-002 | ||
| 900 | |a FJH 028-02 | ||
| 908 | |a Lehrbuch | ||
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