Properties of lattice matched and strained indium gallium arsenide.
Physical properties of lattice matched and strained indium gallium arsenide :
Saved in:
Personal Name(s): | Bhattacharya, P., editor |
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Imprint: |
London :
Institution of Electrical Engineers,
1993.
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Physical Description: |
XXI, 317 S. |
Note: |
englisch |
ISBN: |
9780852968659 0852968655 |
Series Title: |
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EMIS datareviews series ;
8. |
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Shelf Classification: |
LEADER | 01512cam a2200373 n 4500 | ||
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001 | 138898 | ||
005 | 19990416103300.0 | ||
008 | r1993 | ||
020 | |a 0852968655 | ||
035 | |a (Sirsi) a123420 | ||
084 | 0 | |a FAAB - Solid state physics - reference books |2 ZB | |
084 | 0 | |a FJKC - III - V semiconductors |2 ZB | |
084 | 1 | |a SHE - Festkörperphysikalische Daten - Tabellenwerke |2 LS | |
245 | 0 | 0 | |a Properties of lattice matched and strained indium gallium arsenide. |
260 | |a London : |b Institution of Electrical Engineers, |c 1993. | ||
300 | |a XXI, 317 S. | ||
490 | 0 | |a EMIS datareviews series ; |v 8. | |
500 | |a englisch | ||
520 | |a Physical properties of lattice matched and strained indium gallium arsenide : | ||
520 | |a structural properties of ingaas | ||
520 | |a thermal, mechanical and lattice vibrational properties of ingaas | ||
520 | |a band structure of lattice matched and strained ingaas alloys | ||
520 | |a transport properties | ||
520 | |a radiative and nonradiative recombination | ||
520 | |a optical and electrooptic properties of ingaas | ||
520 | |a Ingaas technology | ||
520 | |a device application of ingaas and related heterostructures | ||
596 | |a 1 | ||
650 | 4 | |a III - V semiconductor | |
700 | 1 | |a Bhattacharya, P., |e Hrsg. | |
900 | |a S 001975-0008'01' | ||
900 | |a SHE 015-08 | ||
908 | |a Formeln, Tabellen, Karten | ||
949 | |a SHE 015-08 |w LC |c 1 |i 1094100244 |d 29/8/1997 |l REFERENCE |m ZB |r Y |s Y |t PR |u 25/3/2009 |x ZB-F |1 PRINT |2 TABELLEN |