Properties of strained and relaxed silicon germanium.
Saved in:
Personal Name(s): | Kasper, E., editor |
---|---|
Imprint: |
London :
Institution of Electrical Engineers,
1995.
|
Physical Description: |
XIV, 232 S. |
Note: |
englisch |
ISBN: |
0852968264 9780852968260 |
Series Title: |
EMIS datareviews series ;
12. |
Keywords: |
strained layer systems strained and relaxed SiGe alloys |
Subject (ZB): | |
Classification: | |
Shelf Classification: |
LEADER | 01282cam a2200409 n 4500 | ||
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001 | 142351 | ||
005 | 20000727113800.0 | ||
008 | r1995 | ||
020 | |a 0852968264 | ||
035 | |a (Sirsi) a126500 | ||
084 | 0 | |a FAAB - Solid state physics - reference books |2 ZB | |
084 | 0 | |a FJKB - Elemental semiconductors |2 ZB | |
084 | 1 | |a SHE - Festkörperphysikalische Daten - Tabellenwerke |2 LS | |
245 | 0 | 0 | |a Properties of strained and relaxed silicon germanium. |
260 | |a London : |b Institution of Electrical Engineers, |c 1995. | ||
300 | |a XIV, 232 S. | ||
490 | 0 | |a EMIS datareviews series ; |v 12. | |
500 | |a englisch | ||
596 | |a 1 | ||
650 | 4 | |a silicon | |
650 | 4 | |a germanium | |
650 | 4 | |a strain | |
650 | 4 | |a relaxation | |
650 | 4 | |a structure | |
650 | 4 | |a thermal properties | |
650 | 4 | |a mechanical properties | |
650 | 4 | |a lattice dynamics | |
650 | 4 | |a vibration | |
650 | 4 | |a band structure | |
650 | 4 | |a surface properties | |
653 | |a strained layer systems | ||
653 | |a strained and relaxed SiGe alloys | ||
700 | 1 | |a Kasper, E., |e Hrsg. | |
900 | |a S 001975-0012'01' | ||
900 | |a SHE 015-12 | ||
908 | |a Handbuch | ||
949 | |a SHE 015-12 |w LC |c 1 |i 1096104288 |d 29/8/1997 |l REFERENCE |m ZB |r Y |s Y |t PR |u 25/3/2009 |x ZB-F |1 PRINT |2 HB |