Properties of strained and relaxed silicon germanium.
Saved in:
| Personal Name(s): | Kasper, E., editor |
|---|---|
| Imprint: |
London :
Institution of Electrical Engineers,
1995.
|
| Physical Description: |
XIV, 232 S. |
| Note: |
englisch |
| ISBN: |
0852968264 9780852968260 |
| Series Title: |
EMIS datareviews series ;
12. |
| Keywords: |
strained layer systems strained and relaxed SiGe alloys |
| Subject (ZB): | |
| Classification: | |
| Shelf Classification: |
| LEADER | 01282cam a2200409 n 4500 | ||
|---|---|---|---|
| 001 | 142351 | ||
| 005 | 20000727113800.0 | ||
| 008 | r1995 | ||
| 020 | |a 0852968264 | ||
| 035 | |a (Sirsi) a126500 | ||
| 084 | 0 | |a FAAB - Solid state physics - reference books |2 ZB | |
| 084 | 0 | |a FJKB - Elemental semiconductors |2 ZB | |
| 084 | 1 | |a SHE - Festkörperphysikalische Daten - Tabellenwerke |2 LS | |
| 245 | 0 | 0 | |a Properties of strained and relaxed silicon germanium. |
| 260 | |a London : |b Institution of Electrical Engineers, |c 1995. | ||
| 300 | |a XIV, 232 S. | ||
| 490 | 0 | |a EMIS datareviews series ; |v 12. | |
| 500 | |a englisch | ||
| 596 | |a 1 | ||
| 650 | 4 | |a silicon | |
| 650 | 4 | |a germanium | |
| 650 | 4 | |a strain | |
| 650 | 4 | |a relaxation | |
| 650 | 4 | |a structure | |
| 650 | 4 | |a thermal properties | |
| 650 | 4 | |a mechanical properties | |
| 650 | 4 | |a lattice dynamics | |
| 650 | 4 | |a vibration | |
| 650 | 4 | |a band structure | |
| 650 | 4 | |a surface properties | |
| 653 | |a strained layer systems | ||
| 653 | |a strained and relaxed SiGe alloys | ||
| 700 | 1 | |a Kasper, E., |e Hrsg. | |
| 900 | |a S 001975-0012'01' | ||
| 900 | |a SHE 015-12 | ||
| 908 | |a Handbuch | ||
| 949 | |a SHE 015-12 |w LC |c 1 |i 1096104288 |d 29/8/1997 |l REFERENCE |m ZB |r Y |s Y |t PR |u 25/3/2009 |x ZB-F |1 PRINT |2 HB | ||