Properties of III-V quantum wells and superlattices.
Saved in:
Personal Name(s): | Bhattacharya, P., editor |
---|---|
Imprint: |
Stevenage :
Institution of Electrical Engineers,
1996.
|
Physical Description: |
XVII, 400 S. |
Note: |
englisch |
ISBN: |
0852968817 9780852968819 |
Series Title: |
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EMIS datareviews series ;
15. |
Subject (ZB): | |
Classification: |
LEADER | 01400cam a2200469 n 4500 | ||
---|---|---|---|
001 | 146645 | ||
005 | 19990416103200.0 | ||
008 | r1996 | ||
020 | |a 0852968817 | ||
035 | |a (Sirsi) a130336 | ||
084 | 0 | |a FFPG - Multilayer systems, quantum structures |2 ZB | |
245 | 0 | 0 | |a Properties of III-V quantum wells and superlattices. |
260 | |a Stevenage : |b Institution of Electrical Engineers, |c 1996. | ||
300 | |a XVII, 400 S. | ||
490 | 0 | |a EMIS datareviews series ; |v 15. | |
500 | |a englisch | ||
596 | |a 10 | ||
650 | 4 | |a quantum well | |
650 | 4 | |a superlattice | |
650 | 4 | |a band structure | |
650 | 4 | |a III - V semiconductor | |
650 | 4 | |a exciton | |
650 | 4 | |a electric field | |
650 | 4 | |a magnetic field | |
650 | 4 | |a epitaxy | |
650 | 4 | |a growth | |
650 | 4 | |a molecular beam | |
650 | 4 | |a impurity | |
650 | 4 | |a energy level | |
650 | 4 | |a gallium arsenide | |
650 | 4 | |a indium phosphide | |
650 | 4 | |a transmission electron microscopy | |
650 | 4 | |a X-ray diffraction | |
650 | 4 | |a line broadening | |
650 | 4 | |a interface | |
650 | 4 | |a vacancy | |
650 | 4 | |a disorder phenomena | |
650 | 4 | |a optical properties | |
700 | 1 | |a Bhattacharya, P., |e Hrsg. | |
900 | |a S 001975-0015'01' | ||
908 | |a Monographie, Sammelwerk | ||
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