Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
Saved in:
Personal Name(s): | Levinshtein, M., editor |
---|---|
Imprint: |
Singapore :
World Scientific,
1996.
|
Physical Description: |
XIII, 218 S. |
Note: |
englisch |
ISBN: |
9789810229344 9810229348 |
Series Title: |
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Handbook series on semiconductor parameters ;
1. |
Keywords: |
gallium phosphide (GaP) gallium antimonide (GaSb) indium arsenide (InAs) indium phosphide (InP) indium antimonide (InSb) |
Subject (ZB): | |
Classification: | |
Shelf Classification: |
LEADER | 01521cam a2200457 n 4500 | ||
---|---|---|---|
001 | 147291 | ||
005 | 20001124142900.0 | ||
008 | r1996 | ||
020 | |a 9810229348 | ||
035 | |a (Sirsi) a130945 | ||
084 | 0 | |a FJK - Specific semiconductor materials |2 ZB | |
084 | 0 | |a FJKB - Elemental semiconductors |2 ZB | |
084 | 0 | |a FJKC - III - V semiconductors |2 ZB | |
084 | 1 | |a FJK - Halbleitermaterialien |2 LS | |
245 | 0 | 0 | |a Handbook series on semiconductor parameters. |n 1. |p Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb. |
260 | |a Singapore : |b World Scientific, |c 1996. | ||
300 | |a XIII, 218 S. | ||
490 | 0 | |a Handbook series on semiconductor parameters ; |v 1. | |
500 | |a englisch | ||
596 | |a 1 | ||
650 | 4 | |a elemental semiconductor | |
650 | 4 | |a silicon | |
650 | 4 | |a germanium | |
650 | 4 | |a diamond | |
650 | 4 | |a gallium arsenide | |
650 | 4 | |a III - V semiconductor | |
650 | 4 | |a band structure | |
650 | 4 | |a electrical properties | |
650 | 4 | |a optical properties | |
650 | 4 | |a thermal properties | |
650 | 4 | |a mechanical properties | |
653 | |a gallium phosphide (GaP) | ||
653 | |a gallium antimonide (GaSb) | ||
653 | |a indium arsenide (InAs) | ||
653 | |a indium phosphide (InP) | ||
653 | |a indium antimonide (InSb) | ||
700 | 1 | |a Levinshtein, M., |e Hrsg. | |
900 | |a S 008135-0001'01' | ||
900 | |a FJK 019-01 | ||
908 | |a Handbuch | ||
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