Diffusion processes in high technology materials : proceedings of the ASM Symposium, held in Cincinnati, Ohio, October 11-16, 1987 / editor D. Grupta, A.D. Romig, Jr., M.A. Dayanando.
Saved in:
Personal Name(s): | Gupta, D., editor |
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Romig, Alton D. / Dayananda, M. A. | |
Imprint: |
Aedermannsdorf, Switzerland, Brookfield, VT :
Trans Tech Publications,
1988.
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Physical Description: |
vii, 227 p. |
Note: |
englisch |
ISBN: |
0878495614 9780878495610 |
Keywords: |
point defects and diffusion in silicon and gallium arsenide diffusion and diffusional creep in nanocrystalline materials dopant and ion beam enhanced grain growth in polycrystalline silicon films interface segregation and cohesion oxidation of high technology materials interstitial\substitutional diffusion in III-V and group IV semiconductors Metallization diffusion barriers for thin film metallizations contact metallization for gallium arsenide diffusion in metallic thin films Diffusion phenomena studied by electron microscopy HREM of grain boundaries tunneling microscopy of surface diffusion characterization of interfacial chemistry by analytical electron microscopy solute interactions in metals oxygen diffusion in high T(c) superconductors Tracer diffusion in alloys tracer diffusion of Co-060 and Ni-063 in amorphous NiZr alloy tracer diffusion in pure and boron doped Ni3Al the behavior of transition metals in silicon during annealing transients suppression of vacanciey diffusion during short range ordering crystallization and diffusion studies in amorphous Ni\Zr thin films compound formation and interfacial instability in the ternary Au\Cu\Sn system at low temperature |
Classification: | |
Shelf Classification: |
ZB | |
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Reading Room Call number: FDK 016 Barcode: 1089103213 Available |