Polarization induced 2DEG in AlGaN/GaN HEMTs : on the origin, DC and transient characterization / Ramakrishna Vetury.
Saved in:
Personal Name(s): | Vetury, Ramakrishna. |
---|---|
Imprint: |
Ann Arbor, Mich. :
ProQuest,
2000.
|
Physical Description: |
XIII, 160 S. |
Note: |
englisch |
Dissertation Note: |
Santa Barbara, Univ., Diss., 2000
|
Keywords: |
heterogenous field effect transistors for high power microwave devices high electron mobility transistor ( HEMT ) |
Subject (ZB): | |
Classification: |
ZB | |
---|---|
Open Stacks Call number: B 087220'01' Barcode: 1203100724 Available |