High-speed semiconductor devices / edited by S.M. Sze.

materials and technologies for high speed devices

Saved in:
Sze, S. M.
Book
New York : Wiley, 1990.
xii, 643 p.
Based on notes for lectures and talks given at the 1988 International Electron Devices and Materials Symposium, held at the National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C
"A Wiley-Interscience publication."
englisch
9780471623076
0471623075
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300 |a xii, 643 p. 
500 |a Based on notes for lectures and talks given at the 1988 International Electron Devices and Materials Symposium, held at the National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C 
500 |a "A Wiley-Interscience publication." 
500 |a englisch 
520 |a materials and technologies for high speed devices 
520 |a MOSFET, bipolar and field effect transistors 
520 |a photonic devices 
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650 4 |a semiconductor device 
650 4 |a field effect transistor 
700 1 |a Sze, S. M. 
900 |a B 069665'01' 
908 |a Monographie, Sammelwerk 
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