Semiconductor silicon crystal technology / Fumio Shimura.
Semiconductor silicon crystal technology :
Saved in:
Personal Name(s): | Shimura, Fumio. |
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Imprint: |
San Diego :
Academic Press,
1989.
|
Physical Description: |
viii, 426 p. |
Note: |
englisch |
ISBN: |
0126400458 (alk. paper) |
Classification: | |
Shelf Classification: |
LEADER | 01272nam a2200337 n 4500 | ||
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001 | 17288 | ||
005 | 19970317000000.0 | ||
008 | r1989 | ||
020 | |a 0126400458 (alk. paper) | ||
035 | |a (Sirsi) a24842 | ||
084 | 0 | |a FGCD - Crystal growth of specific substances |2 ZB | |
084 | 0 | |a FJKB - Elemental semiconductors |2 ZB | |
084 | 1 | |a FGC - Kristallzucht, Kristalltechnologie |2 LS | |
245 | 0 | 0 | |a Semiconductor silicon crystal technology / |c Fumio Shimura. |
260 | |a San Diego : |b Academic Press, |c 1989. | ||
300 | |a viii, 426 p. | ||
500 | |a englisch | ||
520 | |a Semiconductor silicon crystal technology : | ||
520 | |a atomic structure and chemical bonds in crystals | ||
520 | |a basic crystallography | ||
520 | |a basic semiconductor physics | ||
520 | |a silicon crystal growth and wafer preparation | ||
520 | |a silicon crystal characteriaztion | ||
520 | |a grown- in and process induced defects in silicon crystals | ||
520 | |a silicon wafer criteria for vlsi\ulsi technology | ||
596 | |a 1 | ||
700 | 1 | |a Shimura, Fumio. | |
900 | |a B 065131'01' | ||
900 | |a FGC 089 | ||
908 | |a Monographie, Sammelwerk | ||
949 | |a FGC 089 |w LC |c 1 |i 1089104311 |d 18/1/2012 |e 12/12/2011 |l STACKS |m ZB |n 23 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |