Pseudomorphe Indium Gallium Arsenid/Gallium(Aluminium)Arsenid Heterostrukturen: Wachstum und Charakterisierung.
Pseudomorphic ingaas/gaalas heterostructures: growth and characterization
Saved in:
Personal Name(s): | Reithmaier, J. P. |
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Imprint: |
Muenchen :
Technische Universitaet Muenchen,
1990.
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Physical Description: |
161 S. |
Note: |
deutsch |
Subject (ZB): | |
Classification: |
LEADER | 01014nam a2200265 n 4500 | ||
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001 | 35860 | ||
005 | 19970418000000.0 | ||
008 | r1990 | ||
035 | |a (Sirsi) a38005 | ||
084 | 0 | |a FFPE - Thin film electronic properties, semiconductor interfaces |2 ZB | |
084 | 0 | |a FJKC - III - V semiconductors |2 ZB | |
084 | 0 | |a FGK - Thin film technology, epitaxy |2 ZB | |
245 | 0 | 0 | |a Pseudomorphe Indium Gallium Arsenid/Gallium(Aluminium)Arsenid Heterostrukturen: Wachstum und Charakterisierung. |
260 | |a Muenchen : |b Technische Universitaet Muenchen, |c 1990. | ||
300 | |a 161 S. | ||
500 | |a deutsch | ||
520 | |a Pseudomorphic ingaas/gaalas heterostructures: growth and characterization | ||
596 | |a 1 | ||
650 | 4 | |a gallium arsenide | |
650 | 4 | |a heterostructure | |
700 | 1 | |a Reithmaier, J. P. | |
710 | 2 | |a Technische Universität (München) | |
900 | |a B 067574'01' | ||
908 | |a Hochschulschrift | ||
949 | |a B 067574'01' |w LC |c 1 |i 1090105893 |l STACKS |m ZB |r Y |s Y |t ZBHS |u 25/3/2009 |x ZB-F |1 PRINT |2 HS |