Recombination in semiconductors.
Recombination in semiconductors :
Saved in:
| Personal Name(s): | Landsberg, Peter Theodore. |
|---|---|
| Imprint: |
Cambridge :
Cambridge University Pr.,
1991.
|
| Physical Description: |
XXII, 595 S. |
| Note: |
englisch |
| ISBN: |
9780521361224 0521361222 |
| Subject (ZB): | |
| Classification: | |
| Shelf Classification: |
| LEADER | 01323nam a2200361 n 4500 | ||
|---|---|---|---|
| 001 | 47863 | ||
| 005 | 20030217085800.0 | ||
| 008 | r1991 | ||
| 020 | |a 0521361222 | ||
| 035 | |a (Sirsi) a46550 | ||
| 084 | 0 | |a FJNH - Excited states in solids |2 ZB | |
| 084 | 1 | |a FJN - Optische Festkörpereigenschaften |2 LS | |
| 245 | 0 | 0 | |a Recombination in semiconductors. |
| 260 | |a Cambridge : |b Cambridge University Pr., |c 1991. | ||
| 300 | |a XXII, 595 S. | ||
| 500 | |a englisch | ||
| 520 | |a Recombination in semiconductors : | ||
| 520 | |a semiconductor statistics | ||
| 520 | |a recombination statistics | ||
| 520 | |a Auger effects and impact ionization (mainly for bands) | ||
| 520 | |a radiative recombination (mainly for bands) | ||
| 520 | |a defects (traps) | ||
| 520 | |a multiphonon recombination | ||
| 520 | |a recombination in low- dimensional semiconductor structures | ||
| 596 | |a 1 10 | ||
| 650 | 4 | |a semiconductor | |
| 650 | 4 | |a recombination | |
| 700 | 1 | |a Landsberg, Peter Theodore. | |
| 900 | |a B 072140'01' | ||
| 900 | |a FJN 164 | ||
| 908 | |a Monographie, Sammelwerk | ||
| 949 | |a B 072140'01' |w LC |c 1 |i 1094100128 |d 11/12/2002 |l STACKS |m IBN-1-2 |r Y |s Y |t INSTB |u 25/3/2009 |x INST-F |1 PRINT | ||
| 949 | |a FJN 164 |w LC |c 1 |i 1093103926 |d 17/9/2018 |e 17/9/2018 |l STACKS |m ZB |n 47 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT | ||