Recombination in semiconductors.
Recombination in semiconductors :
Saved in:
Personal Name(s): | Landsberg, Peter Theodore. |
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Imprint: |
Cambridge :
Cambridge University Pr.,
1991.
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Physical Description: |
XXII, 595 S. |
Note: |
englisch |
ISBN: |
9780521361224 0521361222 |
Subject (ZB): | |
Classification: | |
Shelf Classification: |
LEADER | 01323nam a2200361 n 4500 | ||
---|---|---|---|
001 | 47863 | ||
005 | 20030217085800.0 | ||
008 | r1991 | ||
020 | |a 0521361222 | ||
035 | |a (Sirsi) a46550 | ||
084 | 0 | |a FJNH - Excited states in solids |2 ZB | |
084 | 1 | |a FJN - Optische Festkörpereigenschaften |2 LS | |
245 | 0 | 0 | |a Recombination in semiconductors. |
260 | |a Cambridge : |b Cambridge University Pr., |c 1991. | ||
300 | |a XXII, 595 S. | ||
500 | |a englisch | ||
520 | |a Recombination in semiconductors : | ||
520 | |a semiconductor statistics | ||
520 | |a recombination statistics | ||
520 | |a Auger effects and impact ionization (mainly for bands) | ||
520 | |a radiative recombination (mainly for bands) | ||
520 | |a defects (traps) | ||
520 | |a multiphonon recombination | ||
520 | |a recombination in low- dimensional semiconductor structures | ||
596 | |a 1 10 | ||
650 | 4 | |a semiconductor | |
650 | 4 | |a recombination | |
700 | 1 | |a Landsberg, Peter Theodore. | |
900 | |a B 072140'01' | ||
900 | |a FJN 164 | ||
908 | |a Monographie, Sammelwerk | ||
949 | |a B 072140'01' |w LC |c 1 |i 1094100128 |d 11/12/2002 |l STACKS |m IBN-1-2 |r Y |s Y |t INSTB |u 25/3/2009 |x INST-F |1 PRINT | ||
949 | |a FJN 164 |w LC |c 1 |i 1093103926 |d 17/9/2018 |e 17/9/2018 |l STACKS |m ZB |n 47 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |