International symposium on process physics and modeling in semiconductor technology 0003: proceedings : Electrochemical Society spring meeting 1993 : Honolulu, HI, 19.05.93-21.05.93.
Saved in:
Personal Name(s): | Srinivasan, G. R., editor |
---|---|
Imprint: |
Pennington,NJ :
Electrochemical Society,
1993.
|
Physical Description: |
XI, 628 S. |
Note: |
englisch |
ISBN: |
1566770645 9781566770644 |
Series Title: |
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Proceedings / Electrochemical Society ;
vol 93-0006. |
Keywords: |
thermal processing numerical modeling |
Subject (ZB): | |
Classification: |
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008 | r1993 | ||
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035 | |a (Sirsi) a48714 | ||
084 | 0 | |a FJH - Semiconductor physics |2 ZB | |
084 | 0 | |a FJK - Specific semiconductor materials |2 ZB | |
245 | 0 | 0 | |a International symposium on process physics and modeling in semiconductor technology 0003: proceedings : |b Electrochemical Society spring meeting 1993 : Honolulu, HI, 19.05.93-21.05.93. |
260 | |a Pennington,NJ : |b Electrochemical Society, |c 1993. | ||
300 | |a XI, 628 S. | ||
490 | 0 | |a Proceedings / Electrochemical Society ; |v vol 93-0006. | |
500 | |a englisch | ||
596 | |a 1 | ||
650 | 4 | |a modeling | |
650 | 4 | |a semiconductor | |
650 | 4 | |a technology | |
650 | 4 | |a diffusion | |
650 | 4 | |a dislocation | |
650 | 4 | |a defect | |
650 | 4 | |a thin film | |
650 | 4 | |a growth | |
650 | 4 | |a surface | |
650 | 4 | |a interface | |
650 | 4 | |a plasma processing | |
650 | 4 | |a ion implantation | |
653 | |a thermal processing | ||
653 | |a numerical modeling | ||
700 | 1 | |a Srinivasan, G. R., |e Hrsg. | |
710 | 2 | |a Electrochemical Society. | |
900 | |a S 003730-0093,06'01' | ||
908 | |a Konferenz | ||
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