Heteroepitaxy on silicon : Heteroepitaxy on silicon: symposium. 0001 : Palo-Alto, CA, 16.04.86-18.04.86.
Heteroepitaxy on silicon :
Saved in:
Personal Name(s): | Fan, J. C. C., editor |
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Imprint: |
Pittsburgh, PA :
Materials Research Society,
1986.
|
Physical Description: |
XXII, 273 S. |
Note: |
englisch |
ISBN: |
0931837332 9780931837333 |
Series Title: |
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Materials Research Society symposia proceedings ;
67. |
Classification: | |
Shelf Classification: |
LEADER | 01396cam a2200337 n 4500 | ||
---|---|---|---|
001 | 57638 | ||
005 | 20041014120200.0 | ||
008 | r1986 | ||
020 | |a 0931837332 | ||
035 | |a (Sirsi) a55437 | ||
084 | 0 | |a FAF - Materials research - comprehensive works |2 ZB | |
084 | 0 | |a FGK - Thin film technology, epitaxy |2 ZB | |
084 | 0 | |a FFPE - Thin film electronic properties, semiconductor interfaces |2 ZB | |
084 | 1 | |a FAF - Materialforschung - allgemeine Serien |2 LS | |
245 | 0 | 0 | |a Heteroepitaxy on silicon : |b Heteroepitaxy on silicon: symposium. 0001 : Palo-Alto, CA, 16.04.86-18.04.86. |
260 | |a Pittsburgh, PA : |b Materials Research Society, |c 1986. | ||
300 | |a XXII, 273 S. | ||
490 | 0 | |a Materials Research Society symposia proceedings ; |v 67. | |
500 | |a englisch | ||
520 | |a Heteroepitaxy on silicon : | ||
520 | |a properties of gallium arsenide on silicon | ||
520 | |a heterostructures of semiconductors and insulators on silicon | ||
520 | |a device properties of gallium arsenide on silicon | ||
520 | |a heterostructures of semiconductors and metals on silicon | ||
596 | |a 1 | ||
700 | 1 | |a Fan, J. C. C., |e Hrsg. | |
710 | 2 | |a Materials Research Society. | |
900 | |a FAF 007-67 | ||
900 | |a S 004937-0067'01' | ||
908 | |a Konferenz | ||
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