Survey of Semiconductor Physics [E-Book] : Volume II Barriers, Junctions, Surfaces, and Devices /

Survey of Semiconductor Physics [E-Book] : Volume II Barriers, Junctions, Surfaces, and Devices / by Karl W. Böer.

Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive...

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Böer, Karl W., author
Dordrecht : Springer, 1992
XCIV, 1442 p. online resource.
englisch
9789401129121
10.1007/978-94-011-2912-1
Electrodynamics.
Electronic materials.
Microscopy.
Optical materials.
Optics.
Physics.
Semiconductors.
Solid state physics.
Spectroscopy.



  • I: Surface Properties
  • 1 Introduction
  • 2 Crystal Surfaces, An Introduction
  • 3 Surface Analysis
  • 4 Surface Structures
  • 5 Crystal Growth, Epitaxy
  • 6 Phononic Effects at Surfaces
  • 7 Electronic Surface and Interface States
  • 8 Semiconductor Interfaces and Contacts
  • 9 Electron Penetration through Surfaces
  • 10 Photon Penetration through Surfaces
  • 11 Surface Influence on Bulk Properties
  • II: Space-Charge Effects in Semiconductors
  • 12 Space Charges in Insulators
  • 13 Creation of Space-Charge Regions in Solids
  • 14 The Schottky Barrier
  • 15 Minority Carriers
  • 16 Minority Carrier Currents
  • 17 Schottky Barrier in Two-Carrier Model
  • 18 pn-Homojunctions
  • 19 Carrier Velocity Limitation
  • 20 Semiconductor Heterojunctions
  • 21 The Photovoltaic Effect
  • 22 The Schottky Barrier Photodiode
  • 23 The pn-Junction with Light
  • 24 The Heterojunction with Light
  • 25 The pin Junction with Light
  • 26 High-Field Domains
  • 27 Current Channels
  • III: Materials and Fabrication Technology
  • 28 Purification of Semiconductor Materials
  • 29 Crystallization and Device Shaping
  • 30 Doping and Junction Formation
  • 31 Electrodes
  • 32 Integrated Circuit Processing
  • IV: Semiconductor Devices
  • 33 Schottky Barriers and Diodes
  • 34 Solar Cells
  • 35 Light Emitting Devices
  • 36 Transistors and Multiterminal Devices
  • 37 Semiconductors and Devices: An Epilogue
  • V:
  • Appendix Computation Routines and Tables
  • A.1 Numerical Methods
  • A.1.1 The Kutta-Merson Integration Routine
  • A.1.1A Runge-Kutta Part
  • A.1.1B Kutta-Merson Part
  • A.1.2 The Finite Element Numerical Method
  • A.1.3 The Pros and Cons of the Two Methods
  • A.2 Some Mathematical Tools
  • A.2.1 Series
  • A.2.2 Coordinate Systems
  • A.2.3 The Wave Equation
  • A.3 List of Acronyms
  • A.4 Symbols Used
  • A.5 Important Derived Parameters
  • A.6 Summary of Important Equations
  • A.6.1 Space Charge Related
  • A.6.1A Constant Space Charge Distributions
  • A.6.1B Majority Carrier Injection (Space Charge Limited Current)
  • A.6.1C Classical Schottky Barrier
  • A.6.1D Modified Schottky Barrier
  • A.6.1E Two-Level Schottky Barriers
  • A.6.1F Heterojunction Quasi-Schottky Barrier
  • A.6.1G Quasi-Schottky Barrier with Interface Recombination
  • A.6.1H Carrier Generation and Recombination
  • A.6.1I Diffusion Currents
  • A.6.1J Drift-Enhanced Diffusion Current
  • A.6.1K Tunneling Current
  • A.6.1L Majority Carrier Distribution Near Junction
  • A.6.1M Carrier Velocity Saturation
  • A.6.1N pn-Homojunctions
  • A.6.1O Surface Recombination Current
  • A.6.1P Surface Conditions with Light
  • A.6.1Q pn-Junction with Light
  • A.6.1R Classical Solar Cell Diode Model
  • A.6.2 Vacuum Related
  • A.6.3 Phonon Related
  • A.6.4 Photon Related
  • A.6.4A Reflection and Transmission of Light
  • A.7 Tables
  • Word Index.