Si Detectors and Characterization for HEP and Photon Science Experiment [E-Book] : How to Design Detectors by TCAD Simulation / by Ajay Kumar Srivastava.
Srivastava, Ajay Kumar, (author)
1st edition 2019.
Cham : Springer, 2019
XVII, 183 pages 106 illustrations, 77 illustrations in color (online resource)
englisch
9783030195311
10.1007/978-3-030-19531-1
Full Text
Table of Contents:
  • Development OF Si DETECTORS FOR THE CMS LHC Experiments
  • Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC
  • Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL
  • T-CAD Simulation for the designing of detectors
  • Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL
  • Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
  • CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS
  • Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
  • Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
  • Appendices.