Si Detectors and Characterization for HEP and Photon Science Experiment [E-Book] : How to Design Detectors by TCAD Simulation / by Ajay Kumar Srivastava.
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si dete...
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Full text |
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Personal Name(s): | Srivastava, Ajay Kumar, author |
Edition: |
1st edition 2019. |
Imprint: |
Cham :
Springer,
2019
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Physical Description: |
XVII, 183 pages 106 illustrations, 77 illustrations in color (online resource) |
Note: |
englisch |
ISBN: |
9783030195311 |
DOI: |
10.1007/978-3-030-19531-1 |
Subject (LOC): |
- Development OF Si DETECTORS FOR THE CMS LHC Experiments
- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC
- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL
- T-CAD Simulation for the designing of detectors
- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL
- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS
- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
- Appendices.