Ferroelectric-Gate Field Effect Transistor Memories [E-Book] : Device Physics and Applications / edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.
Ishiwara, Hiroshi, (editor)
Okuyama, Masanori, (editor) / Park, Byung-Eun, (editor) / Sakai, Shigeki, (editor) / Yoon, Sung-Min, (editor)
2nd edition 2020.
Singapore : Springer, 2020
XIV, 425 pages 313 illustrations, 183 illustrations in color (online resource)
englisch
9789811512124
10.1007/978-981-15-1212-4
Topics in Applied Physics ; 131
Full Text
Table of Contents:
  • I. Introduction
  • II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors
  • III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
  • Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
  • V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors
  • VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates
  • Ⅶ Applications and Future Prospects.