Advances in electronics and electron physics / L. Marton Hrsg., R. L. Champion ...
Saved in:
Personal Name(s): | Marton, C., editor |
---|---|
Champion, R. L. | |
Imprint: |
New-York, NY :
Academic Pr.,
1982
|
Physical Description: |
XII, 413 S. |
Note: |
englisch |
ISBN: |
9780120146581 0120146584 |
Series Title: |
/* Depending on the record driver, $field may either be an array with
"name" and "number" keys or a flat string containing only the series
name. We should account for both cases to maximize compatibility. */?>
Advances in electronics and electron physics ;
58 |
Keywords: |
radiation damage in semiconductors : MOS transistor crystal defect in semiconductors : gallium phosphide : gallium arsenide : indium phosphide ion implantation : semiconductor |
Subject (ZB): | |
Classification: |
LEADER | 01036cam a2200289 n 4500 | ||
---|---|---|---|
001 | 101431 | ||
005 | 19990203162200.0 | ||
008 | r1982 eng | ||
020 | |a 0120146584 | ||
035 | |a (Sirsi) a92140 | ||
041 | |a eng | ||
084 | 0 | |a TBG - Transistors | |
245 | 0 | 0 | |a Advances in electronics and electron physics / |c L. Marton Hrsg., R. L. Champion ... |
260 | |a New-York, NY : |b Academic Pr., |c 1982 | ||
300 | |a XII, 413 S. | ||
490 | 0 | |a Advances in electronics and electron physics ; |v 58 | |
500 | |a englisch | ||
596 | |a 1 | ||
650 | 4 | |a large scale research | |
653 | |a radiation damage in semiconductors : MOS transistor | ||
653 | |a crystal defect in semiconductors : gallium phosphide : gallium arsenide : indium phosphide | ||
653 | |a ion implantation : semiconductor | ||
700 | 1 | |a Marton, C., |e Hrsg. | |
700 | 1 | |a Champion, R. L. | |
900 | |a S 000100-0058'01' | ||
908 | |a Monographie, Sammelwerk | ||
949 | |a S 000100-0058'01' |w LC |c 1 |i 1082002123 |l STACKS |m ZB |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-T |1 PRINT |