Rekombinatsionnye protsessy v poluprovodnikakh pri vysokikh urovnyakh vozbuzhdeniya.
Saved in:
Personal Name(s): | Basov, N. G., editor |
---|---|
Imprint: |
Moskva :
Izdatel'stvo Nauka,
1981.
|
Physical Description: |
143 S. |
Note: |
sonstige |
Series Title: |
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Akademiya nauk SSSR fizicheskij institut imeni P.N. Lebedeva : trudy ;
T. 0128. |
Keywords: |
semiconductor : recombination |
Classification: |
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008 | r1981 | ||
035 | |a (Sirsi) a92953 | ||
084 | 0 | |a FJHB - Band structure and electronic transport in semiconductors |2 ZB | |
245 | 0 | 0 | |a Rekombinatsionnye protsessy v poluprovodnikakh pri vysokikh urovnyakh vozbuzhdeniya. |
260 | |a Moskva : |b Izdatel'stvo Nauka, |c 1981. | ||
300 | |a 143 S. | ||
490 | 0 | |a Akademiya nauk SSSR fizicheskij institut imeni P.N. Lebedeva : trudy ; |v T. 0128. | |
500 | |a sonstige | ||
596 | |a 1 | ||
653 | |a semiconductor : recombination | ||
700 | 1 | |a Basov, N. G., |e Hrsg. | |
710 | 2 | |a Fiziceskij Institut Imena P. N. Lebedeva (Moskva) | |
900 | |a S 000368-0128'01' | ||
908 | |a Monographie, Sammelwerk | ||
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