This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1002/pssa.200982876 in citations.
Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)
Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)
We have investigated the distribution of H atoms around native dangling bonds in a-Si:14 by electron-nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47(12), 7013-7024 (1993)] we find that the distance betwee...
Saved in:
Personal Name(s): | Fehr, M. |
---|---|
Schnegg, A. / Teutloff, C. / Bittl, R. / Astakhov, O. / Finger, F. / Rech, B. / Lips, K. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Physica status solidi / A, 207 (2010) S. 552 - 555 |
Imprint: |
Weinheim
Wiley-VCH
2010
|
Physical Description: |
552 - 555 |
DOI: |
10.1002/pssa.200982876 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Physica Status Solidi A
207 |
Subject (ZB): | |
Publikationsportal JuSER |
We have investigated the distribution of H atoms around native dangling bonds in a-Si:14 by electron-nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47(12), 7013-7024 (1993)] we find that the distance between H atoms and dangling-bond defects can be well below r=3 angstrom. Our experimental data suggest that the H distribution is continuous and homogeneous and there is no indication for a short-range order between H atoms and dangling bonds. This work is a first step toward the investigation of the H distribution around light-induced defects to test models predicting the immediate proximity of H and defects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |