This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.86.180401 in citations.
Superparamagetism in Gd-doped GaN induced by Ga-vacancy clustering
Superparamagetism in Gd-doped GaN induced by Ga-vacancy clustering
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Personal Name(s): | Thiess, A. |
---|---|
Dederichs, P.H. / Zeller, R. / Blügel, S. / Lambrecht, W.R.L. | |
Contributing Institute: |
Theoretische Nanoelektronik; PGI-2 JARA - HPC; JARA-HPC Quanten-Theorie der Materialien; PGI-1 Theoretische Nanoelektronik; IAS-3 Quanten-Theorie der Materialien; IAS-1 |
Published in: | Physical Review B Physical review / B, 86 86 (2012 2012) 18 18, S. 180401 180401 |
Imprint: |
College Park, Md.
APS
2012
|
Physical Description: |
180401 |
DOI: |
10.1103/PhysRevB.86.180401 |
Document Type: |
Journal Article |
Research Program: |
Quantensimulation für realistische Grenzflächen in Nanosystemen Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
86 |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Description not available. |