Description: Ambipolar microcrystalline silicon transistors and inverters

This title appears in the Scientific Report : 2009

Ambipolar microcrystalline silicon transistors and inverters

Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcryst...

Personal Name(s):	Chan, K. Y.
	Knipp, D. / Kirchhoff, J. / Gordijn, A. / Stiebig, H.
Contributing Institute:	Photovoltaik; IEF-5
Published in:	Solid state electronics, 53 (2009) S. 635 - 639
Imprint:	Oxford [u.a.] Pergamon, Elsevier Science 2009
Physical Description:	635 - 639
DOI:	10.1016/j.sse.2009.04.002
Document Type:	Journal Article
Research Program:	Erneuerbare Energien
Series Title:	Solid-State Electronics 53
Subject (ZB):	J TFTs Microcrystalline silicon Ambipolar transistor Ambipolar inverter
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1016/j.sse.2009.04.002 in citations.

Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition at low deposition temperature of 160 degrees C. The electrical parameters of the ambipolar microcrystalline silicon TFTs and inverters will be described. The influence of contact effects on the operation of ambipolar microcrystalline silicon TFTs was investigated. Furthermore, the influence of the ambipolar transistor characteristics on the performance of the ambipolar inverter will be discussed. (C) 2009 Elsevier Ltd. All rights reserved.