This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2009.04.002 in citations.
Ambipolar microcrystalline silicon transistors and inverters
Ambipolar microcrystalline silicon transistors and inverters
Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcryst...
Saved in:
Personal Name(s): | Chan, K. Y. |
---|---|
Knipp, D. / Kirchhoff, J. / Gordijn, A. / Stiebig, H. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Solid state electronics, 53 (2009) S. 635 - 639 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2009
|
Physical Description: |
635 - 639 |
DOI: |
10.1016/j.sse.2009.04.002 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Solid-State Electronics
53 |
Subject (ZB): | |
Publikationsportal JuSER |
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520 | |a Hydrogenated microcrystalline silicon (mu c-Si:H) has lately attracted considerable attention as a promising candidate for thin-film transistors (TFTs) in large area electronic applications due to its superior charge carrier mobility. Here, we present ambipolar TFTs and inverters based on microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition at low deposition temperature of 160 degrees C. The electrical parameters of the ambipolar microcrystalline silicon TFTs and inverters will be described. The influence of contact effects on the operation of ambipolar microcrystalline silicon TFTs was investigated. Furthermore, the influence of the ambipolar transistor characteristics on the performance of the ambipolar inverter will be discussed. (C) 2009 Elsevier Ltd. All rights reserved. | ||
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