This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1088/0957-4484/21/10/105701 in citations.
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistiv...
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Personal Name(s): | Habicht, S. |
---|---|
Zhao, Q. T. / Feste, S. F. / Knoll, L. / Trellenkamp, S. / Ghyselen, B. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Prozesstechnologie; IBN-PT JARA-FIT; JARA-FIT |
Published in: | Nanotechnology, 21 (2010) S. 105701 |
Imprint: |
Bristol
IOP Publ.
2010
|
Physical Description: |
105701 |
DOI: |
10.1088/0957-4484/21/10/105701 |
PubMed ID: |
20154367 |
Document Type: |
Journal Article |
Research Program: |
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Nanotechnology
21 |
Subject (ZB): | |
Publikationsportal JuSER |
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower. |