This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1063/1.3292217 in citations.
Please use the identifier: http://hdl.handle.net/2128/17280 in citations.
Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray...
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Personal Name(s): | Cheng, X. |
---|---|
Xu, D. / Sun, Q.-Q. / He, D. / Wang, Z. / Yu, Y. / Zhang, D.W. / Zhao, Q. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Applied physics letters, 96 (2010) S. 022904 |
Imprint: |
Melville, NY
American Institute of Physics
2010
|
Physical Description: |
022904 |
DOI: |
10.1063/1.3292217 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
96 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17280 in citations.
Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively. |