This title appears in the Scientific Report :
2010
Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Saved in:
Personal Name(s): | Yu, W. |
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Zhang, B. / Zhao, Q. T. / Hartmann, J.-M. / Buca, D. / Nichau, A. / Durgun Özben, E. / Lopes, J. M. J. / Schubert, J. / Ghyselen, B. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
Proceedings of 6th Workshop of the thematic Network on Silicon-on-Insulator Technology (EUROSOI). - 2010. S. 25 - 26 |
Imprint: |
2010
|
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |