This title appears in the Scientific Report :
2010
Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
Saved in:
Personal Name(s): | Habicht, S. |
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Feste, S. F. / Zhao, Q. T. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
Proceedings of 40th European Solid-State Devices Research Conference,13-17. September, Sevilla, Spain, 2010. - S. 372 - 375 |
Imprint: |
2010
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Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |