This title appears in the Scientific Report :
2010
Influence of Si-doping on structure in InAs nanowires
Influence of Si-doping on structure in InAs nanowires
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Personal Name(s): | von der Ahe, M. |
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Hardtdegen, H. / Sladek, K. / Penz, A. / Dorn, F. / Heiss, A. / Weirich, T. / Grützmacher, D. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
European Crystallographic Meeting |
Imprint: |
2010
|
Conference: | Darmstadt 2010-08-29 |
Document Type: |
Poster |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |