This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1109/TMTT.2010.2065870 in citations.
Whispering gallery mode hemisphere dielectric resonators with impedance plane
Whispering gallery mode hemisphere dielectric resonators with impedance plane
The electrodynamic characteristics of a high-Q dielectric whispering gallery mode resonator in the form of a hemisphere positioned on an impedance plane were studied. The analysis of the anisotropic resonator was modeled using Maxwell equations and the impedance Leontovich boundary condition. The in...
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Personal Name(s): | Barannik, A. |
---|---|
Bunyaev, S. / Cherpak, N. / Prokopenko, Y. / Kharchenko, A. / Vitusevich, S. | |
Contributing Institute: |
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 JARA-FIT; JARA-FIT |
Published in: | IEEE transactions on microwave theory and techniques, 58 (2010) S. 2682 - 2691 |
Imprint: |
New York, NY
IEEE
2010
|
Physical Description: |
2682 - 2691 |
DOI: |
10.1109/TMTT.2010.2065870 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
IEEE Transactions on Microwave Theory and Techniques
58 |
Subject (ZB): | |
Publikationsportal JuSER |
The electrodynamic characteristics of a high-Q dielectric whispering gallery mode resonator in the form of a hemisphere positioned on an impedance plane were studied. The analysis of the anisotropic resonator was modeled using Maxwell equations and the impedance Leontovich boundary condition. The interaction coefficient A(S)(j)of the conductor and microwave field was determined using a frequency and field distribution of the j-type mode in the hemisphere resonator considering a perfect conducting plane. Results of the theoretical study and experimental measurements of the Teflon resonator frequency spectrum and Q factor are in good agreement. The results obtained are confirmed by calculations using Microwave Studio CST 2008. In the case of the sapphire hemispherical resonator with an impedance plane, comparison of the experimental and simulation results allows us to identify the H-type modes in the resonator and their electromagnetic field distribution. In such anisotropic hemisphere resonators, the quasi-TE modes are revealed. The modes are excited together with TE modes inherent to the isotropic resonator and they have an identical distribution of electromagnetic field. |