This title appears in the Scientific Report :
2010
Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE
Comparison of growth behavior for undoped an Si-doped GaAs and InAs nanowires deposited by selective area MOVPE
Saved in:
Personal Name(s): | Sladek, K. |
---|---|
Penz, A. / Akabori, M. / Hardtdegen, H. / Grützmacher, D. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
8th International Workshop on epitaxial semiconductors on patterned substrates and novel surfaces |
Imprint: |
2010
|
Conference: | Como, Italy 2010-06-14 |
Document Type: |
Talk (non-conference) |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |