Hrauda, N., Zhang, J., Stangl, J., Bauer, G., Biasotto, C., Jovanovic, V., . . . Grützmacher, D. (2010). Investigations on strained Si channels above buried 2D peridoc SiGe islands integrated into a Field-Effect Transistor.

Hrauda, N., J.J Zhang, J. Stangl, G. Bauer, C. Biasotto, V. Jovanovic, L.K Nanver, J. Moers, andfavorite D. Grützmacher. Investigations On Strained Si Channels Above Buried 2D Peridoc SiGe Islands Integrated Into a Field-Effect Transistor. 2010.

Hrauda, N., et al. Investigations On Strained Si Channels Above Buried 2D Peridoc SiGe Islands Integrated Into a Field-Effect Transistor. 2010.