This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1002/adma.201001872 in citations.
Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices
Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices
Saved in:
Personal Name(s): | Münstermann, R. |
---|---|
Menke, T. / Dittmann, R. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Advanced materials, 22 (2010) S. 4819 - 4822 |
Imprint: |
Weinheim
Wiley-VCH
2010
|
Physical Description: |
4819 - 4822 |
PubMed ID: |
20803540 |
DOI: |
10.1002/adma.201001872 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Advanced Materials
22 |
Subject (ZB): | |
Publikationsportal JuSER |
Description not available. |