This title appears in the Scientific Report :
2010
High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs
High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs
Saved in:
Personal Name(s): | Yu, W. |
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Zhang, B. / Durgun Özben, E. / Minamisawa, R. A. / Luptak, R. / Hagedorn, M. / Holländer, B. / Schubert, J. / Hartmann, J.M. / Bourdelle, K.K. / Zhao, Q. T. / Buca, D. / Mantl, S. / Grützmacher, D. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
33rd Edition IEEE International Semiconductor Conference, CAS-2010 |
Imprint: |
2010
|
Conference: | Sinaia, Romania 2010-10-11 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |