This title appears in the Scientific Report :
2010
High mobility Si-Ge channel and high-k materials for NanoMOSFETs
High mobility Si-Ge channel and high-k materials for NanoMOSFETs
Saved in:
Personal Name(s): | Zhao, Q. T. |
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Yu, W. / Zhang, B. / Lopes, J. M. J. / Buca, D. / Minamisawa, R. A. / Durgun Özben, E. / Luptak, R. / Feste, S. F. / Nichau, A. / Schubert, J. / Holländer, B. / Hartmann, J.M. / Bourdelle, K.K. / Kernevez, N. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: |
5th International SiGe Technology and Device Meeting (ISTDM 2010) |
Imprint: |
2010
|
Conference: | Stockholm, Schweden 2010-05-24 |
Document Type: |
Conference Presentation |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |