This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1007/s11664-012-1989-6 in citations.
Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf
Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf
Saved in:
Personal Name(s): | Reuters, Benjamin (Corresponding author) |
---|---|
Wille, A. / Holländer, Bernhard / Sakalauskas, E. / Ketteniss, N. / Mauder, C. / Goldhahn, R. / Heuken, M. / Kalisch, H. / Vescan, A. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of electronic materials, 41 (2012) 5, S. 905 - 909 |
Imprint: |
Warrendale, Pa
TMS
2012
|
DOI: |
10.1007/s11664-012-1989-6 |
Document Type: |
Journal Article |
Research Program: |
ohne Topic |
Publikationsportal JuSER |
Description not available. |