This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1063/1.4765360 in citations.
Please use the identifier: http://hdl.handle.net/2128/5030 in citations.
Dopant mapping of Be delta-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy
Dopant mapping of Be delta-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy
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Personal Name(s): | Ebert, Philipp (Corresponding author) |
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Landrock,S. / Chiu,Y.P. / Breuer,U. / Dunin-Borkowski, Rafal | |
Contributing Institute: |
Analytik; ZEA-3 Mikrostrukturforschung; PGI-5 |
Published in: | Applied physics letters, 101 (2012) 19, S. 192103 |
Imprint: |
Melville, NY
American Institute of Physics
2012
|
DOI: |
10.1063/1.4765360 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Link: |
Get full text Published under German "Allianz" Licensing conditions on 2012-11-06. Available in OpenAccess from 2012-11-06 |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/5030 in citations.
Description not available. |