This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.092 in citations.
Defect passivation by hydrogen reincorporation for silicon quantum dots in SiC/SiOx hetero-superlattice
Defect passivation by hydrogen reincorporation for silicon quantum dots in SiC/SiOx hetero-superlattice
Saved in:
Personal Name(s): | Ding, Kaining (Corresponding author) |
---|---|
Aeberhard, Urs / Astakhov, Oleksandr / Breuer, Uwe / Beigmohamadi, Maryam / Suckow, Stephan / Berghoff, Birger / Beyer, Wolfhard / Finger, Friedhelm / Carius, Reinhard / Rau, Uwe | |
Contributing Institute: |
Analytik; ZEA-3 Photovoltaik; IEK-5 |
Published in: | Journal of non-crystalline solids, 358 (2012) 17, S. 2145 - 2149 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2012
|
DOI: |
10.1016/j.jnoncrysol.2011.12.092 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
Description not available. |