This title appears in the Scientific Report : 2013 

Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
Winden, Andreas (Corresponding author)
Mikulics, Martin / Haab, Anna / Grützmacher, Detlev / Hardtdegen, Hilde
Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
Japanese journal of applied physics, 52 (2013) 8S, S. 08JF05
Tokyo Inst. of Pure and Applied Physics 2013
10.7567/JJAP.52.08JF05
Journal Article
Sensorics and bioinspired systems
Please use the identifier: http://dx.doi.org/10.7567/JJAP.52.08JF05 in citations.
In this paper, we report on the fabrication of InN nanopyramid-based photodetectors operating within the telecommunication wavelength range. We found that the spectral sensitivity of individually addressable InN nanopyramids can be tuned within an interval of 1550–1750 nm since the band edge luminescence energy correlates with the structure size. According to this, we optimized the nanopatterning technique of SiO2/GaN/sapphire substrates as well as the selective area growth to precisely control the nanostructure dimensions. Furthermore, we developed a technological process to contact InN nanopyramids and to integrate them into a high-frequency device layout. Thus, InN nanopyramid-based photodetectors exhibit a low RC constant, low dark currents below 1 nA, as well as a high responsivity of about 0.2 A/W at a wavelength of 1.55 µm.