This title appears in the Scientific Report : 2013 

Comparison of InAs nanowire conductivity: influence of growth method and structure
Sladek, Kamil (Corresponding author)
Winden, Andreas / Wirths, Stephan / Weis, Karl / Blömers, Christian / Gül, Önder / Grap, Thomas / Lenk, Steffi / von der Ahe, Martina / Weirich, Thomas E. / Hardtdegen, Hilde / Lepsa, Mihail Ion / Lysov, Andrey / Li, Zi-An / Prost, Werner / Tegude, Franz-Josef / Lüth, Hans / Schäpers, Thomas / Grützmacher, Detlev
JARA-FIT; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
Physica status solidi / C, 9 (2012) 2, S. 230 - 234
Berlin Wiley-VCH 2012
230-234
10.1002/pssc.201100282
38th International Symposium on Compound Semiconductors (ISCS), Berlin (Germany), 2011-05-22 - 2011-05-26
Contribution to a conference proceedings
Journal Article
Frontiers of charge based Electronics
Please use the identifier: http://dx.doi.org/10.1002/pssc.201100282 in citations.
The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catalyst free VLS molecular beam epitaxy (MBE) – is investigated. The influence on conductivity by stacking faults and different growth conditions is analyzed to determine the main impact. It is found that in terms of crystal structure, nanowires deposited by VLS MOVPE and VLS MBE behave similarly showing a zinc blende (ZB) phase while nanowires deposited by SA MOVPE feature a high density of stacking faults and a tendency to higher amounts of wurtzite (WZ) when grown with a decreased growth rate. However, the conductivity of wires deposited by VLS MOVPE is found to be much higher and statistically less dispersive compared to the other two wire types. An electrical similarity between nominally undoped wires in VLS MOVPE and previously reported intentionally doped wires in SA MOVPE is observed and discussed. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)