This title appears in the Scientific Report : 2013 

Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Grap, Th (Corresponding author)
Rieger, T / Blömers, Christian / Schäpers, Thomas / Grützmacher, D / Lepsa, M I
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
Nanotechnology, 24 (2013) 33, S. 335601 -
Bristol IOP Publ. 2013
10.1088/0957-4484/24/33/335601
Journal Article
Frontiers of charge based Electronics
Please use the identifier: http://dx.doi.org/10.1088/0957-4484/24/33/335601 in citations.
We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor–liquid–solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.