This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1557/opl.2013.226 in citations.
Quantum-kinetic Theory of Defect-mediated Recombination in Nanostructure-based Photovoltaic Devices
Quantum-kinetic Theory of Defect-mediated Recombination in Nanostructure-based Photovoltaic Devices
In this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach...
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Personal Name(s): | Aeberhard, Urs (Corresponding author) |
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Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | MRS online proceedings library, 1493 (2013) S. mrsf12-1493-e08-05 |
Imprint: |
Warrendale, Pa.
MRS
2013
|
DOI: |
10.1557/opl.2013.226 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
In this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states. |