This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1016/j.solmat.2013.01.038 in citations.
On the origin of deep oxygen defects in hydrogenated nanocrystalline silicon thin films used in photovoltaic applications
On the origin of deep oxygen defects in hydrogenated nanocrystalline silicon thin films used in photovoltaic applications
Saved in:
Personal Name(s): | Fields, J. D. (Corresponding author) |
---|---|
Gorman, B. / Merdzhanova, T. / Yan, B. / Su, T. / Taylor, P. C. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | Solar energy materials & solar cells, 113 (2013) S. 61 - 70 |
Imprint: |
Amsterdam
North Holland
2013
|
DOI: |
10.1016/j.solmat.2013.01.038 |
Document Type: |
Journal Article |
Research Program: |
Thin Film Photovoltaics |
Publikationsportal JuSER |
Description not available. |