This title appears in the Scientific Report : 2011 

Local exact exchange potentials within the all-electron FLAPW method and a comparison with pseudopotential results
Betzinger, M.
Friedrich, C. / Blügel, S. / Görling, A.
Quanten-Theorie der Materialien; PGI-1
Jülich-Aachen Research Alliance - Simulation Sciences; JARA-SIM
JARA-FIT; JARA-FIT
Quanten-Theorie der Materialien; IAS-1
Physical review / B, 83 (2011) S. 045105
College Park, Md. APS 2011
045105
10.1103/PhysRevB.83.045105
Journal Article
Grundlagen für zukünftige Informationstechnologien
Physical Review B 83
J
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OpenAccess
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.83.045105 in citations.
Please use the identifier: http://hdl.handle.net/2128/10951 in citations.
We present a general numerical approach to construct local Kohn-Sham potentials from orbital-dependent functionals within the all-electron full-potential linearized augmented-plane-wave (FLAPW) method, in which core and valence electrons are treated on an equal footing. As a practical example, we present a treatment of the orbital-dependent exact-exchange (EXX) energy and potential. A formulation in terms of a mixed product basis, which is constructed from products of LAPW basis functions, enables a solution of the optimized-effective-potential (OEP) equation with standard numerical algebraic tools and without shape approximations for the resulting potential. We find that the mixed product and LAPW basis sets must be properly balanced to obtain smooth and converged EXX potentials without spurious oscillations. The construction and convergence of the exchange potential are analyzed in detail for diamond. Our all-electron results for C, Si, SiC, Ge, and GaAs semiconductors as well as Ne and Ar noble-gas solids are in very favorable agreement with plane-wave pseudopotential calculations. This confirms the adequacy of the pseudopotential approximation in the context of the EXX-OEP formalism and clarifies a previous contradiction between FLAPW and pseudopotential results.