This title appears in the Scientific Report :
2013
Please use the identifier:
http://dx.doi.org/10.1063/1.4838695 in citations.
Please use the identifier: http://hdl.handle.net/2128/17342 in citations.
Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic conte...
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Personal Name(s): | Liu, Linjie (Corresponding author) |
---|---|
Jin, Lei / Knoll, Lars / Wirths, Stephan / Nichau, Alexander / Buca, Dan / Mussler, Gregor / Holländer, Bernhard / Xu, Dawei / Feng Di, Zeng / Zhang, Miao / Zhao, Qing-Tai / Mantl, Siegfried | |
Contributing Institute: |
Mikrostrukturforschung; PGI-5 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Applied physics letters, 103 (2013) 23, S. 231909 - |
Imprint: |
Melville, NY
American Institute of Physics
2013
|
DOI: |
10.1063/1.4838695 |
Document Type: |
Journal Article |
Research Program: |
Frontiers of charge based Electronics |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17342 in citations.
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520 | |a We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application. | ||
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