This title appears in the Scientific Report :
2011
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.83.121310 in citations.
Please use the identifier: http://hdl.handle.net/2128/10941 in citations.
Localized edge states in two-dimensional topological insulators: Ultrathin Bi films
Localized edge states in two-dimensional topological insulators: Ultrathin Bi films
We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we...
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Personal Name(s): | Wada, M. |
---|---|
Murakami, S. / Freimuth, F. / Bihlmayer, G. | |
Contributing Institute: |
Quanten-Theorie der Materialien; PGI-1 Quanten-Theorie der Materialien; IAS-1 |
Published in: | Physical Review B Physical review / B, 83 83 (2011 2011) 12 12, S. 121310 121310 |
Imprint: |
College Park, Md.
APS
2011
|
Physical Description: |
121310 |
DOI: |
10.1103/PhysRevB.83.121310 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
83 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/10941 in citations.
We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well. |