This title appears in the Scientific Report : 2013 

Development of P-Type µc-SiOx:H for Thin-Film Silicon Solar Cells on Sputtered ZnO:Al
Zhang, C. (Corresponding author)
Meier, Matthias / Lambertz, A. / Smirnov, V. / Gordijn, A. / Merdzhanova, T.
Photovoltaik; IEK-5
WIP 2013
2554 - 2557
10.4229/28thEUPVSEC2013-3CV.1.41
28th European Photovoltaic Solar Energy Conference and Exhibition, Paris (France), 2013-09-30 - 2013-10-04
Contribution to a conference proceedings
Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC)
Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules
Thin Film Photovoltaics
Please use the identifier: http://dx.doi.org/10.4229/28thEUPVSEC2013-3CV.1.41 in citations.
Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) was developed and implemented as a contact layer in hydrogenated amorphous thin film silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al and tunable refractive index make p-type μc-SiOx:H a promising alternative to the commonly used p-type μc-Si:H contact layers. In this work p-type μc-SiOx:H layers were fabricated with a conductivity up to the order of 10-2 S/cm and over 60% Raman crystallinity. Furthermore, we present p-type μc-SiOx:H with a broad range over which the optical properties (band gap E04 and refractive index n) can be tuned (2.1 eV < E04 < 2.8 eV and 1.6 < n < 2.6) by adapting deposition parameters like CO2/SiH4 ratio in the gas mixture. a-Si:H solar cells were produced with an conversion efficiency improvement from 9.4 to 9.7% by using p-type μc-SiOx:H compared to standard p-type μc-Si:H contact layer.